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Multi state organic molecules for sequential logic circuits

Technology Number: 

1568

Principal Investigator

Prof.
Milko E.
Van der Boom

Department: 

Organic Chemistry
Summary 

A new multi-state molecular building block for tomorrow’s electric circuits and memory storage devices was realized. Information technology is the core of many industries today. The main challenge facing this industry is the need for miniaturization, due to an ever increase in information density. Molecular information processing and storage is becoming a logical candidate to replace the available methods, by use of molecules as building blocks for “bottom up” approaches. A memory device that exists in multiple stable states with a molecular based assembly was prepared. This can offer new ways in which information is processed (multiple-threads) as well as increasing the information density in random access memory (RAM), storage devices and methods.

Applications


  • Binary and ternary Static Random Access Memory
  • Multi-State Dynamic Random Access Memory

  • Multi-State Flash Memory

  • Multi-State Solid State Drive (SSD)

  • Multi-State Information Processing Units


Advantages


  • Low manufacturing cost

  • Robustness

  • Optical read out allows fast data transfer, and non destructive information access

  • Short response time and fast read-out.

  • System is easy to reset

  • Little material is needed/ environmentally friendly.

  • The system can be integrated with other electronic circuits

  • Multi-valued information storage

  • Increase in information density, with no need for additional spatial requirements.

  • Alternative to silicon  technology


Technology's Essence


Electronically addressable multi-state memory for sequential logic flip-flop, flip-flap-flop circuits, and higher order switchable memory circuits,  can be constructed by materials composed of a molecular based assembly that can exist in multiple states. Since the optical output is a precise function of the applied voltage, multi-valued information can be written on to the assembly by applying specific potential biases. The read and write cycle is completed by monitoring the induced optical changes of the system. This system uses the same electrical inputs as conventional memory devices and uses an optical read-out which is non destructive and fast. The properties of the device can be used to create an apparatus for information storage especially with respect to developing solid-state drives in computers (SSDs).

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